A leading Chinese memory chip maker may have achieved another technological breakthrough amid tight US trade restrictions, according to third-party analysis of a company paper delivered to an international conference. ChangXin Memory Technologies (CXMT), China's top dynamic random access memory (DRAM) developer, this week presented a paper to the 69th annual IEEE International Electron Devices Meeting (IEDM) in San Francisco, giving an indication of its design capabilities for gate-all-around (G